View LH28F160SGED-L10_2893139.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

LH28F160SGED-L10 LH28F160SGED-L10 16 m-bit (512 kb x 16 x 2-bank) smartvoltage dual work flash memory description the LH28F160SGED-L10 dual work flash memory with smartvoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. the lh28f160sged- l10 is the highest density, highest performance non-volatile read/write solution for solid-state storage applications. LH28F160SGED-L10 can read/write/erase at v cc = 2.7 v and v pp = 2.7 v. its low voltage operation capability realizes longer battery life and suits for cellular phone application. its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, simms and memory cards. its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. for secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to dram, the LH28F160SGED-L10 offers three levels of protection : absolute protection with v pp at gnd, selective hardware block locking, or flexible software block locking. these alternatives give designers ultimate control of their code security needs. features ? smartvoltage dual work technology C 2.7 v, 3.3 v or 5 v v cc C 2.7 v, 3.3 v, 5 v or 12 v v pp C capable of performing erase, write and read for each bank independently (impossible to perform read from both banks at a time). ? high performance read access time C 100 ns (5.00.5 v)/100 ns (3.30.3 v)/ 120 ns (2.7 to 3.6 v) ? enhanced automated suspend options C word write suspend to read C block erase suspend to word write C block erase suspend to read ? enhanced data protection features C absolute protection with v pp = gnd C flexible block locking C block erase/word write lockout during power transitions ? sram-compatible write interface ? high-density symmetrically-blocked architecture C thirty-two 32 k-word erasable blocks ? enhanced cycling capability C 100 000 block erase cycles C 1.6 million block erase cycles/bank ? low power management C deep power-down mode C automatic power saving mode decreases icc in static mode ? automated word write and block erase C command user interface C status register ? etox tm * v nonvolatile flash technology ? package C 48-pin tsop type i (tsop048-p-1220) normal bend * etox is a trademark of intel corporation. - 1 - in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that may occur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the latest device specification sheets before using any sharp device.
LH28F160SGED-L10 - 2 - pin connections 48-pin tsop (type i) (tsop048-p-1220) a 15 a 14 a 13 a 12 a 11 a 10 a 9 a 8 nc nc we# rp# v pp wp# nc a 18 a 17 a 7 a 6 a 5 a 4 a 3 a 2 a 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a 16 gnd dq 15 dq 7 dq 14 dq 6 dq 13 dq 5 dq 12 dq 4 v cc dq 11 dq 3 dq 10 dq 2 dq 9 dq 1 dq 8 dq 0 oe# gnd be 1 # be 0 # a 0 top view
LH28F160SGED-L10 - 3 - block diagram bank0 bank1 dq 0 -dq 15 v cc we# oe# wp# rp# a 0 -a 18 v cc gnd v pp be 1 # be 0 # i/o logic command user interface input buffer data register write state machine program/erase voltage switch identifier register output buffer y gating data comparator status register output multiplexer 16 32 k-word blocks y decoder input buffer address latch address counter x decoder
LH28F160SGED-L10 - 4 - pin description symbol type name and function a 0 -a 18 input address inputs : inputs for addresses during read and write operations. addresses are internally latched during a write cycle. data input/outputs : inputs data and commands during cui write cycles; outputs data during memory array, status register, and identifier code read cycles. data pins float to high-impedance when the chip is deselected or outputs are disabled. data is internally latched during a write cycle. bank enable : activates the devices control logic, input buffers, decoders, and sense amplifiers. when be 0 # are "low", bank0 is in active. when be 1 # are "low", bank1 is in active. both be 0 # and be 1 # must not be low at the same time. be 0 #, be 1 #-high deselects the device and reduces power consumption to standby levels. reset/deep power-down : puts the device in deep power-down mode and resets internal automation. rp#-high enables normal operation. when driven low, rp# inhibits write operations which provide data protection during power transitions. exit from deep power-down sets the device to read array mode. rp# at v hh allows to set permanent lock-bit. block erase, word write, or lock-bit configuration with v ih rp# v hh produce spurious results and should not be attempted. oe# input output enable : controls the device's outputs during a read cycle. we# input write enable : controls writes to the cui and array blocks. addresses and data are latched on the rising edge of the we# pulse. wp# input write protect : master control for block locking. when v il , locked blocks cannot be erased and programmed, and block lock-bits cannot be set and reset. block erase, word write, lock-bit configuration power supply : for erasing array blocks, writing words, or configuring lock-bits. with v pp v pplk , memory contents cannot be altered. block erase, word write, and lock-bit configuration with an invalid v pp (see section 6.2.3 "dc characteristics" ) produce spurious results and should not be attempted. device power supply : internal detection configured the device for 2.7 v, 3.3 v or 5 v operation. to switch from one voltage to another, ramp v cc down to gnd and then ramp v cc to the new voltage. do not float any power pins. with v cc v lko , all write attempts to the flash memory are inhibited. device operations at invalid v cc voltage (see section 6.2.3 "dc characteristics" ) produce spurious results and should not be attempted. gnd supply ground : do not float any ground pins. nc no connect : lead is not internal connected; recommend to be floated. dq 0 -dq 15 input/ output be 0 #, be 1 # input rp# input v pp v cc supply supply
LH28F160SGED-L10 1 introduction this datasheet contains LH28F160SGED-L10 specifications. section 1 provides a flash memory overview. sections 2, 3, 4, and 5 describe the memory organization and functionality. section 6 covers electrical specifications. lh28f160sged- l10 flash memory documentation also includes ordering information which is referenced in section 7. 1.1 new features key enhancements of LH28F160SGED-L10 smartvoltage dual work flash memory are : ? smartvoltage dual work technology ? enhanced suspend capabilities ? in-system block locking ? permanent lock capability note following important differences : ?v pplk has been lowered to 1.5 v to support 3.3 v and 5 v block erase, word write, and lock- bit configuration operations. designs that switch v pp off during read operations should make sure that the v pp voltage transitions to gnd. ? to take advantage of smartvoltage technology, allow v cc connection to 2.7 v, 3.3 v or 5 v. ? once set the permanent lock bit, the blocks which have been set block lock-bit can not be erased, written forever. 1.2 product overview the LH28F160SGED-L10 is a high-performance 16 m-bit smartvoltage dual work flash memory organized as 1 024 k-word of 16 bits. the 1 024 k- word of data is arranged in thirty-two 32 k-word blocks which are individually erasable, lockable, and unlockable in-system. the memory map is shown in fig. 1 . all pins except of be# are shared by both banks, and be# is divided to be 0 # and be 1 # in order to select one of banks. be 0 # is assigned to no. 26 pin which is ce# in lh28f800sge-l10, be 1 # is assigned to no. 27 pin which is gnd in lh28f800sge-l10. to select either bank (bank0) be 0 # must be "l", and to select another bank (bank1) be 1 # must be "l". selecting both banks (bank0 and bank1) at a time, except of read operation (array read, status register read), turns both be 0 # and be 1 # to "l". operation mode of bank0 and bank1 as follows : 1) both bank0 and bank1 are in deep power-down (rp# = "l"). 2) both bank0 and bank1 are in standby (be 0 # = be 1 # = "h"). 3) bank0 is in standby and bank1 is in active state of programming or erase, or bank0 is in active state of programming or erase and bank1 is in standby. 4) both bank0 and bank1 are in active state (impossible to perform simultaneous read from both banks). in this case bank0 and bank1 perform independent operation, for example, after input erase command to bank0 erase or program command to bank1 is succeeded, bank0 and bank1 perform each operation concurrently. smartvoltage technology provides a choice of v cc and v pp combinations, as shown in table 1 , to meet system performance and power expectations. 2.7 to 3.6 v v cc consumes approximately one-fifth the power of 5 v v cc . but, 5 v v cc provides the highest read performance. v pp at 3.3 v and 5 v eliminates the need for a separate 12 v converter, while v pp = 12 v maximizes block erase and word write performance. in addition to flexible erase and program voltages, the dedicated v pp pin gives complete data protection when v pp v pplk . - 5 -
- 6 - LH28F160SGED-L10 table 1 v cc and v pp voltage combinations offered by smartvoltage technology internal v cc and v pp detection circuitry auto- matically configures the device for optimized read and write operations. a command user interface (cui) serves as the interface between the system processor and internal operation of the device. a valid command sequence written to the cui initiates device automation. an internal write state machine (wsm) automatically executes the algorithms and timing necessary for block erase, word write, and lock-bit configuration operations. a block erase operation erases one of the devices 32 k-word blocks typically within 1.2 second (5 v v cc , 12 v v pp ) independent of other blocks. each block can be independently erased 100 000 times (1.6 million block erases per device). block erase suspend mode allows system software to suspend block erase to read data from, or write data to any other block. writing memory data is performed in word increments typically within 7.5 s (5 v v cc , 12 v v pp ). word write suspend mode enables the system to read data from, or write data to any other flash memory array location. the selected block can be locked or unlocked individually by the combination of thirty-two block lock bits and the rp# or wp#. block erase or word write must not be carried out by setting block lock bits and setting wp# to low and rp# to v ih . even if wp# is high state or rp# is set to v hh , block erase and word write to locked blocks is prohibited by setting permanent lock bit. in each bank0, 1 contains of status registers. the status register indicates when the wsms block erase, word write, or lock-bit configuration operation is finished. the LH28F160SGED-L10 also incorporates a dual bank-enable function with two input pins, be 0 # and be 1 #. for minimum chip designs, be 0 # may be tied to ground and use be 1 # as the bank enable input. the LH28F160SGED-L10 uses the logical combination of these two signals to enable or disable the entire chip. both be 0 # and be 1 # must be active low to enable the device and if either one becomes inactive, the bank will be disabled. this feature allows the system designer to reduce the number of control pins used in a large array of 16 m-bit devices. the access time is 100 ns (t avqv ) at the v cc supply voltage range of 4.5 to 5.5 v over the temperature range, C10 to +70?c. at lower v cc voltage, the access time is 100 ns (3.0 to 3.6 v) and 120 ns (2.7 to 3.6 v). the automatic power saving (aps) feature substantially reduces active current when the device is in static mode (addresses not switching). in aps mode, the typical i ccr current is 1 ma at 5 v v cc and 3 ma at 2.7 to 3.6 v v cc , both bank0, 1 are in active state. when be# and rp# pins are at v cc , the i cc cmos standby mode is enabled. when the rp# pin is at gnd, deep power-down mode is enabled which minimizes power consumption and provides write protection during reset. a reset time (t phqv ) is required from rp# switching high until outputs are valid. likewise, the device has a wake time (t phel ) from rp#-high until writes to the cui are recognized. with rp# at gnd, the wsm is reset and the status register is cleared. v cc voltage v pp voltage 2.7 v 2.7 v, 3.3 v, 5 v, 12 v 3.3 v 3.3 v, 5 v, 12 v 5 v 5 v, 12 v
- 7 - LH28F160SGED-L10 2 principles of operation the lh28f800sge-l10 smartvoltage dual work flash memory includes an on-chip wsm to manage block erase, word write, and lock-bit configuration functions. it allows for 100% ttl-level : control inputs, fixed power supplies during block erasure, word write, and lock-bit configuration, and minimal processor overhead with ram-like interface timings. after initial device power-up or return from deep power-down mode (see table 2 "bus operations" ), the device defaults to read array mode. manipulation of external memory control pins allow array read, standby, and output disable operations. status register and identifier codes can be accessed through the cui independent of the v pp voltage. high voltage on v pp enables successful block erasure, word writing, and lock-bit configuration. all functions associated with altering memory contentsblock erase, word write, lock-bit configuration, status, and identifier codesare accessed via the cui and verified through the status register. commands are written using standard micro- processor write timings. the cui contents serve as input to the wsm, which controls the block erase, word write, and lock-bit configuration. the internal algorithms are regulated by the wsm, including pulse repetition, internal verification, and margining of data. addresses and data are internally latched during write cycles. writing the appropriate command outputs array data, accesses the identifier codes, or outputs status register data. 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 7ffff 78000 77fff 70000 6ffff 67fff 68000 60000 5ffff 58000 57fff 50000 4ffff 48000 47fff 40000 3ffff 38000 37fff 30000 2ffff 28000 27fff 20000 1ffff 18000 17fff 10000 0ffff 08000 07fff 00000 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 32 k-word block 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 7ffff 78000 77fff 70000 6ffff 67fff 68000 60000 5ffff 58000 57fff 50000 4ffff 48000 47fff 40000 3ffff 38000 37fff 30000 2ffff 28000 27fff 20000 1ffff 18000 17fff 10000 0ffff 08000 07fff 00000 bank0 (be 0 # = "l") bank1 (be 1 # = "l") fig.1 memory map
- 8 - LH28F160SGED-L10 interface software that initiates and polls progress of block erase, word write, and lock-bit configuration can be stored in any block. this code is copied to and executed from system ram during flash memory updates. after successful completion, reads are again possible via the read array command. block erase suspend allows system software to suspend a block erase to read/write data from/to blocks other than that which is suspended. word write suspend allows system software to suspend a word write to read data from any other flash memory array location. 2.1 data protection depending on the application, the system designer may choose to make the v pp power supply switchable (available only when memory block erases, word writes, or lock-bit configurations are required) or hardwired to v pph1/2/3 . the device accommodates either design practice and encourages optimization of the processor-memory interface. when v pp v pplk , memory contents cannot be altered. the cui, with two-step block erase, word write, or lock-bit configuration command sequences, provides protection from unwanted operations even when high voltage is applied to v pp . all write functions are disabled when v cc is below the write lockout voltage v lko or when rp# is at v il . the devices block locking capability provides additional protection from inadvertent code or data alteration by gating erase and word write operations. 3 bus operation the local cpu reads and writes flash memory in- system. all bus cycles to or from the flash memory conform to standard microprocessor bus cycles. 3.1 read information can be read from any block, identifier codes, or status register independent of the v pp voltage. rp# can be at either v ih or v hh . the first task is to write the appropriate read mode command (read array, read identifier codes, or read status register) to the cui. upon initial device power-up or after exit from deep power- down mode, the device automatically resets to read array mode. five control pins dictate the data flow in and out of the component : be#, oe#, we#, rp# and wp#. be# and oe# must be driven active to obtain data at the outputs. be# is the device selection control, and when active enables the selected memory device. oe# is the data output (dq 0 -dq 15 ) control and when active drives the selected memory data onto the i/o bus. we# must be at v ih and rp# must be at v ih or v hh . fig. 13 illustrates read cycle. 3.2 output disable with oe# at a logic-high level (v ih ), the device outputs are disabled. output pins dq 0 -dq 15 are placed in a high-impedance state. 3.3 standby be# at a logic-high level (v ih ) places the device in standby mode which substantially reduces device power consumption. dq 0 -dq 15 outputs are placed in a high-impedance state independent of be#. if deselected during block erase, word write, or lock- bit configuration, the device continues functioning, and consuming active power until the operation completes. 3.4 deep power-down rp# at v il initiates the deep power-down mode. in read modes, rp#-low deselects the memory, places output drivers in a high-impedance state and turns off all internal circuits. rp# must be held low for a minimum of 100 ns. time t phqv is required after return from power-down until initial memory access outputs are valid. after this wake-up interval, normal operation is restored. the cui is reset to read array mode and status register is set to 80h.
- 9 - LH28F160SGED-L10 during block erase, word write, or lock-bit configuration modes, rp#-low will abort the operation. memory contents being altered are no longer valid; the data may be partially erased or written. time t phwl is required after rp# goes to logic-high (v ih ) before another command can be written. as with any automated device, it is important to assert rp# during system reset. when the system comes out of reset, it expects to read from the flash memory. automated flash memories provide status information when accessed during block erase, word write, or lock-bit configuration modes. if a cpu reset occurs with no flash memory reset, proper cpu initialization may not occur because the flash memory may be providing status information instead of array data. sharps flash memories allow proper cpu initialization following a system reset through the use of the rp# input. in this application, rp# is controlled by the same reset# signal that resets the system cpu. 3.5 read identifier codes the read identifier codes operation outputs the manufacture code, device code, block lock configuration codes for each block, and the permanent lock configuration code (see fig. 2 ). using the manufacture and device codes, the system cpu can automatically match the device with its proper algorithms. the block lock and permanent lock configuration codes identify locked and unlocked blocks and permanent bank lock-bit setting. 7ffff 78004 78003 78002 78001 78000 0ffff 08004 08003 08002 08001 08000 07fff 00004 00003 00002 00001 00000 reserved for future implementation reserved for future implementation reserved for future implementation reserved for future implementation reserved for future implementation block 15 lock configuration code block 15 block 1 block 0 (blocks 2 through 14) block 1 lock configuration code permanent lock configuration code block 0 lock configuration code device code manufacture code bank0 (be 0 # = "l") 7ffff 78004 78003 78002 78001 78000 0ffff 08004 08003 08002 08001 08000 07fff 00004 00003 00002 00001 00000 block 15 lock configuration code block 15 block 1 block 0 (blocks 2 through 14) block 1 lock configuration code permanent lock configuration code block 0 lock configuration code device code manufacture code bank1 (be 1 # = "l") reserved for future implementation reserved for future implementation reserved for future implementation reserved for future implementation reserved for future implementation fig. 2 device identifier code memory map
LH28F160SGED-L10 3.6 write writing commands to the cui enable reading of device data and identifier codes. they also control inspection and clearing of the status register. the block erase command requires appropriate command data and an address within the block to be erased. the word write command requires the command and address of the location to be written. set permanent bank and block lock-bit commands require the command and address within the device (permanent bank lock) or block within the device (block lock) to be locked. the clear block lock-bits command requires the command and address within the device. the cui does not occupy an addressable memory location. it is written when we# and be# are active. the address and data needed to execute a command are latched on the rising edge of we# or be# (whichever goes high first). standard microprocessor write timings are used. fig. 14 and fig. 15 illustrate we# and be# controlled write operations. 4 command definitions when the v pp v pplk , read operations from the status register, identifier codes, or blocks are enabled. placing v pph1/2/3 on v pp enables successful block erase, word write and lock-bit configuration operations. device operations are selected by writing specific commands into the cui. table 3 defines these commands. - 10 - table 2 bus operations mode note rp# be 0 #be 1 # oe# we# address v pp dq 0-15 bank0 1, 2, v ih or v il v ih read bank1 7, 8 v hh v ih v il v il v ih xxd out disable v il v il output disable v ih or v hh xxv ih v ih x x high z bank0 v ih or v ih v il standby bank1 v hh v il v ih x x x x high z bank0, 1 v ih v ih deep power-down 3 v il x x x x x x high z bank0 v ih or v il v ih see read identifier codes bank1 7, 8 v hh v ih v il v il v ih fig. 2 x (note 4) disable v il v il bank0 v ih or v il v ih write bank1 5, 6, 7 v hh v ih v il v ih v il xxd in bank0, 1 v il v il notes : 1. refer to section 6.2.3 "dc characteristics" . when v pp v pplk , memory contents can be read, but not altered. 2. x can be v il or v ih for control pins and addresses, and v pplk or v pph1/2/3 for v pp . see section 6.2.3 "dc characteristics" for v pplk and v pph1/2/3 voltages. 3. rp# at gnd0.2 v ensures the lowest deep power- down current. 4. see section 4.2 for read identifier code data. 5. v ih < rp# < v hh produce spurious results and should not be attempted. 6. refer to table 3 for valid d in during a write operation. 7. dont use the timing both oe# and we# are v il . 8. impossible to perform simultaneous read from both banks at a time. both be 0 # and be 1 # must not be low at the same time.
LH28F160SGED-L10 - 11 - command bus cycles note first bus cycle second bus cycle req d. oper (note 1) addr (note 2) data (note 3) oper (note 1) addr (note 2) data (note 3) read array/reset 1 write x ffh read identifier codes 3 2 4 write x 90h read ia id read status register 2 write x 70h read x srd clear status register 1 write x 50h block erase 2 5 write ba 20h write ba d0h word write 2 5, 6 write wa 40h or 10h write wa wd block erase and 1 5 write x b0h word write suspend block erase and 1 5 write x d0h word write resume set block lock-bit 2 7 write ba 60h write ba 01h set permanent bank 2 7 write x 60h write x f1h lock-bit clear block lock-bits 2 8 write x 60h write x d0h table 3 command definitions (note 9) notes : 1. b us operations are defined in table 2 . 2. x = any valid address within the device. ia = identifier code address : see fig. 2 . ba = address within the block being erased or locked. wa = address of memory location to be written. 3. srd = data read from status register. see table 6 for a description of the status register bits. wd = data to be written at location wa. data is latched on the rising edge of we# or be# (whichever goes high first). id = data read from identifier codes. 4. following the read identifier codes command, read operations access manufacture, device, block lock, and permanent lock codes. see section 4.2 for read identifier code data. 5. if the block is locked and the permanent lock-bit is not set, wp# must be at v ih or rp# must be at v hh to enable block erase or word write operations. attempts to issue a block erase or word write to a locked block while wp# is v ih or rp# is v hh . 6. either 40h or 10h is recognized by the wsm as the word write setup. 7. if the permanent bank lock-bit is set, wp# must be at v ih or rp# must be at v hh to set a block lock-bit. rp# must be at v hh to set the permanent lock-bit. if the permanent lock-bit is set, a block lock-bit cannot be set. once the permanent lock-bit is set, permanent lock-bit reset is unable. 8. if the permanent bank lock-bit is set, clear block lock-bits operation is unable. the clear block lock-bits operation simultaneously clears all block lock-bits. if the permanent lock-bit is not set, the clear block lock-bits command can be done while wp# is v ih or rp# is v hh . 9. commands other than those shown above are reserved by sharp for future device implementations and should not be used.
- 12 - LH28F160SGED-L10 4.1 read array command upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. this operation is also initiated by writing the read array command. the device remains enabled for reads until another command is written. once the internal wsm has started a block erase, word write or lock-bit configuration, the device will not recognize the read array command until the wsm completes its operation unless the wsm is suspended via an erase suspend or word write suspend command. the read array command functions independently of the v pp voltage and rp# can be v ih or v hh . 4.2 read identifier codes command the identifier code operation is initiated by writing the read identifier codes command. following the command write, read cycles from addresses shown in fig. 2 retrieve the manufacture, device, block lock configuration and permanent lock configuration codes (see table 4 for identifier code values). to terminate the operation, write another valid command. like the read array command, the read identifier codes command functions independently of the v pp voltage and rp# can be v ih or v hh . following the read identifier codes command, the following information can be read : table 4 identifier codes notes : 1. x selects the specific block lock configuration code to be read. see fig. 2 for the device identifier code memory map. 4.3 read status register command the status register may be read to determine when a block erase, word write, or lock-bit configuration is complete and whether the operation completed successfully. it may be read at any time by writing the read status register command. after writing this command, all subsequent read operations output data from the status register until another valid command is written. the status register contents are latched on the falling edge of oe# or be#, whichever occurs. oe# or be# must toggle to v ih before further reads to update the status register latch. the read status register command functions independently of the v pp voltage. rp# can be v ih or v hh . 4.4 clear status register command status register bits sr.5, sr.4, sr.3, and sr.1 are set to "1"s by the wsm and can only be reset by the clear status register command. these bits indicate various failure conditions (see table 6 ). by allowing system software to reset these bits, several operations (such as cumulatively erasing or locking multiple blocks or writing several words in sequence) may be performed. the status register may be polled to determine if an error occurred during the sequence. to clear the status register, the clear status register command (50h) is written. it functions independently of the applied v pp voltage. rp# can be v ih or v hh . this command is not functional during block erase or word write suspend modes. 4.5 block erase command erase is executed one block at a time and initiated by a two-cycle command. a block erase setup is first written, followed by a block erase confirm. this command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to ffh). block preconditioning, erase, and verify are handled internally by the wsm (invisible to the system). code address data manufacture code 00000h 00b0h device code 00001h 0050h block lock configuration xx002h (note 1) ? unlocked dq 0 = 0 ? locked dq 0 = 1 ? reserved for future enhancement dq 1-15 permanent lock configuration 00003h ? unlocked dq 0 = 0 ? locked dq 0 = 1 ? reserved for future enhancement dq 1-15
- 13 - LH28F160SGED-L10 after the two-cycle block erase sequence is written, the device automatically outputs status register data when read (see fig. 3 ). the cpu can detect block erase completion by analyzing the output data of the status register bit sr.7. when the block erase is complete, status register bit sr.5 should be checked. if a block erase error is detected, the status register should be cleared before system software attempts corrective actions. the cui remains in read status register mode until a new command is issued. this two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. an invalid block erase command sequence will result in both status register bits sr.4 and sr.5 being set to "1". also, reliable block erasure can only occur when v cc = v cc1/2/3 and v pp = v pph1/2/3 . in the absence of this high voltage, block contents are protected against erasure. if block erase is attempted while v pp v pplk , sr.3 and sr.5 will be set to "1". successful block erase requires that the corresponding block lock-bit be cleared or, if set, that wp# = v ih or rp# = v hh . if block erase is attempted when the corresponding block lock-bit is set and wp# = v il and rp# = v ih , sr.1 and sr.5 will be set to "1". once permanent lock-bit is set, the blocks which have been set block lock-bit are unable to erase forever. block erase operations with v ih < rp# < v hh produce spurious results and should not be attempted. 4.6 word write command word write is executed by a two-cycle command sequence. word write setup (standard 40h or alternate 10h) is written, followed by a second write that specifies the address and data (latched on the rising edge of we#). the wsm then takes over, controlling the word write and write verify algorithms internally. after the word write sequence is written, the device automatically outputs status register data when read (see fig. 4 ). the cpu can detect the completion of the word write event by analyzing the status register bit sr.7. when word write is complete, status register bit sr.4 should be checked. if word write error is detected, the status register should be cleared. the internal wsm verify only detects errors for "1"s that do not successfully write to "0"s. the cui remains in read status register mode until it receives another command. reliable word writes can only occur when v cc = v cc1/2/3 and v pp = v pph1/2/3 . in the absence of this high voltage, memory contents are protected against word writes. if word write is attempted while v pp v pplk , status register bits sr.3 and sr.4 will be set to "1". successful word write requires that the corresponding block lock-bit be cleared or, if set, that wp# = v ih or rp# = v hh . if word write is attempted when the corresponding block lock-bit is set and wp# = v il and rp# = v ih , sr.1 and sr.4 will be set to "1". once permanent lock-bit is set, the blocks which have been set block lock-bit are unable to write forever. word write operations with v ih < rp# < v hh produce spurious results and should not be attempted. 4.7 block erase suspend command the block erase suspend command allows block erase interruption to read or word write data in another block of memory. once the block erase process starts, writing the block erase suspend command requests that the wsm suspend the block erase sequence at a predetermined point in the algorithm. the device outputs status register data when read after the block erase suspend command is written. polling status register bits sr.7 and sr.6 can determine when the block erase operation has been suspended (both will be set to "1"). specification t whrh2 defines the block erase suspend latency.
- 14 - LH28F160SGED-L10 at this point, a read array command can be written to read data from blocks other than that which is suspended. a word write command sequence can also be issued during erase suspend to program data in other blocks. using the word write suspend command (see section 4.8 ), a word write operation can also be suspended. during a word write operation with block erase suspended, status register bit sr.7 will return to "0". however, sr.6 will remain "1" to indicate block erase suspend status. the only other valid commands while block erase is suspended are read status register and block erase resume. after a block erase resume command is written to the flash memory, the wsm will continue the block erase process. status register bits sr.6 and sr.7 will automatically clear. after the erase resume command is written, the device automatically outputs status register data when read (see fig. 5 ). v pp must remain at v pph1/2/3 (the same v pp level used for block erase) while block erase is suspended. rp# must also remain at v ih or v hh (the same rp# level used for block erase). wp# must also remain at v il or v ih (the same wp# level used for block erase). block erase cannot resume until word write operations initiated during block erase suspend have completed. 4.8 word write suspend command the word write suspend command allows word write interruption to read data in other flash memory locations. once the word write process starts, writing the word write suspend command requests that the wsm suspend the word write sequence at a predetermined point in the algorithm. the device continues to output status register data when read after the word write suspend command is written. polling status register bits sr.7 and sr.2 can determine when the word write operation has been suspended (both will be set to "1"). specification t whrh1 defines the word write suspend latency. at this point, a read array command can be written to read data from locations other than that which is suspended. the only other valid commands while word write is suspended are read status register and word write resume. after word write resume command is written to the flash memory, the wsm will continue the word write process. status register bits sr.2 and sr.7 will automatically clear. after the word write resume command is written, the device automatically outputs status register data when read (see fig. 6 ). v pp must remain at v pph1/2/3 (the same v pp level used for word write) while in word write suspend mode. rp# must also remain at v ih or v hh (the same rp# level used for word write). wp# must also remain at v il or v ih (the same wp# level used for word write). 4.9 set block and permanent bank lock-bit commands the combination of the software command sequence and hardware wp#, rp# pin provides most flexible block lock (write protection) capability. the word write/block erase operation is restricted by the status of block lock-bit, wp# pin, rp# pin and permanent lock-bit. the status of wp# pin, rp# pin and permanent lock-bit restricts the set block bit. when the permanent lock-bit has not been set, and when wp# = v ih or rp# = v hh , the block lock bit can be set with the status of the rp# pin. when rp# = v hh , the permanent lock-bit can be set with the permanent lock-bit set command. after the permanent lock-bit has been set, the write/erase operation to the block lock-bit can never be accepted. refer to table 5 for the hardware and the software write protection. set block lock-bit and permanent lock-bit are executed by a two-cycle command sequence. the set block or permanent lock-bit setup along with appropriate block or device address is written followed by either the set block lock-bit confirm (and an address within the block to be locked) or the set
- 15 - LH28F160SGED-L10 permanent lock-bit confirm (and any device address). the wsm then controls the set lock-bit algorithm. after the sequence is written, the device automatically outputs status register data when read (see fig. 7 ). the cpu can detect the completion of the set lock-bit event by analyzing the status register bit sr.7. when the set lock-bit operation is complete, status register bit sr.4 should be checked. if an error is detected, the status register should be cleared. the cui will remain in read status register mode until a new command is issued. this two-step sequence of set-up followed by execution ensures that lock-bits are not accidentally set. an invalid set block or permanent lock-bit command will result in status register bits sr.4 and sr.5 being set to "1". also, reliable operations occur only when v cc = v cc1/2/3 and v pp = v pph1/2/3 . in the absence of this high voltage, lock- bit contents are protected against alteration. a successful set block lock-bit operation requires that the permanent lock-bit be cleared and wp# = v ih or rp# = v hh . if it is attempted with the permanent lock-bit set, sr.1 and sr.4 will be set to "1" and the operation will fail. set block lock-bit operations while v ih < rp# < v hh produce spurious results and should not be attempted. a successful set permanent lock-bit operation requires that rp# = v hh . if it is attempted with rp# = v ih , sr.1 and sr.4 will be set to "1" and the operation will fail. set permanent lock-bit operations with v ih < rp# < v hh produce spurious results and should not be attempted. 4.10 clear block lock-bits command all set block lock-bits are cleared in parallel via the clear block lock-bits command. with the permanent lock-bit not set and wp# = v ih or rp# = v hh , block lock-bits can be cleared using the clear block lock-bits command. if the permanent lock-bit is set, clear block lock-bits operation is unable. see table 5 for a summary of hardware and software write protection options. clear block lock-bits option is executed by a two- cycle command sequence. a clear block lock-bits setup is first written. after the command is written, the device automatically outputs status register data when read (see fig. 8 ). the cpu can detect completion of the clear block lock-bits event by analyzing the status register bit sr.7. when the operation is complete, status register bit sr.5 should be checked. if a clear block lock-bits error is detected, the status register should be cleared. the cui will remain in read status register mode until another command is issued. this two-step sequence of set-up followed by execution ensures that block lock-bits are not accidentally cleared. an invalid clear block lock- bits command sequence will result in status register bits sr.4 and sr.5 being set to "1". also, a reliable clear block lock-bits operation can only occur when v cc = v cc1/2/3 and v pp = v pph1/2/3 . in a clear block lock-bits operation is attempted while v pp v pplk , sr.3 and sr.5 will be set to "1". in the absence of this high voltage, the block lock-bit contents are protected against alteration. a successful clear block lock-bits operation requires that the permanent lock-bit is not set and wp# = v ih or rp# = v hh . if it is attempted with the permanent lock-bit set or wp# = v il and rp# = v ih , sr.1 and sr.5 will be set to "1" and the operation will fail. a clear block lock-bits operation with v ih < rp# < v hh produce spurious results and should not be attempted.
- 16 - LH28F160SGED-L10 if a clear block lock-bits operation is aborted due to v pp or v cc transition out of valid range or wp# or rp# active transition, block lock-bit values are left in an undetermined state. a repeat of clear block lock-bits is required to initialize block lock-bit contents to known values. once the permanent lock-bit is set, it cannot be cleared. note : 1. there are two banks (bank0 and bank1). each bank has it s own permanent lock-bit. table 5 write protection alternatives (note 1) operation permanent block wp # rp # effect lock-bit lock-bit x0xv ih or v hh block erase and word write enabled v ih v ih or v hh block lock-bit override. block erase and word write enabled block erase 0v hh block lock-bit override. or 1v il block erase and word write enabled word write v ih block is locked. block erase and word write disabled 1xx permanent lock-bit is set. block erase and word write disabled v ih v ih or v hh set block lock-bit enabled set block 0v il v hh set block lock-bit enabled lock-bit xv il v ih set block lock-bit disabled 1xx permanent lock-bit is set. set block lock-bit disabled set permanent xxx v hh set permanent lock-bit enabled bank lock-bit (note 1) v ih set permanent lock-bit disabled v ih v ih or v hh clear block lock-bits enabled clear block 0v il v hh clear block lock-bits enabled lock-bits xv il v ih clear block lock-bits disabled 1xx permanent lock-bit is set. clear block lock-bits disabled
- 17 - LH28F160SGED-L10 table 6 status register definition wsms ess eclbs wwslbs vpps wwss dps r 76543210 sr.7 = write state machine status (wsms) 1 = ready 0 = busy sr.6 = erase suspend status (ess) 1 = block erase suspended 0 = block erase in progress/completed sr.5 = erase and clear lock-bits status (eclbs) 1 = error in block erase or clear lock-bits 0 = successful block erase or clear lock-bits sr.4 = word write and set lock-bit status (wwslbs) 1 = error in word write or set permanent/block lock-bit 0 = successful word write or set permanent/block lock-bit sr.3 = v pp status (vpps) 1= v pp low detect, operation abort 0= v pp ok sr.2 = word write suspend status (wwss) 1 = word write suspended 0 = word write in progress/completed sr.1 = device protect status (dps) 1 = permanent lock-bit, block lock-bit and/or wp#/rp# lock detected, operation abort 0 = unlock sr.0 = reserved for future enhancements (r) notes : check ry # /by # or sr.7 to determine block erase, word write, or lock-bit configuration completion. sr.6-0 are invalid while sr.7 = "0". if both sr.5 and sr.4 are "1"s after a block erase or lock-bit configuration attempt, an improper command sequence was entered. sr.3 does not provide a continuous indication of v pp level. the wsm interrogates and indicates the v pp level only after block erase, word write, set block/permanent lock-bit, or clear block lock-bits command sequences. sr.3 is not guaranteed to reports accurate feedback only when v pp v pph1/2/3 . sr.1 does not provide a continuous indication of permanent and block lock-bit values. the wsm interrogates the permanent lock-bit, block lock-bit, wp# and rp# only after block erase, word write, or lock-bit configuration command sequences. it informs the system, depending on the attempted operation, if the block lock-bit is set, permanent lock-bit is set, and/or wp# is not v ih, rp# is not v hh . reading the block lock and permanent lock configuration codes after writing the read identifier codes command indicates permanent and block lock-bit status. sr.0 is reserved for future use and should be masked out when polling the status register.
LH28F160SGED-L10 - 18 - block erase complete start write 20h, block address write d0h, block address read status register 0 sr.7 = 1 full status check if desired repeat for subsequent block erasures. full status check can be done after each block erase or after a sequence of block erasures. write ffh after the last block erase operation to place device in read array mode. bus operation write write read standby command erase setup comments data = 20h addr = within block to be erased data = d0h addr = within block to be erased status register data check sr.7 1 = wsm ready 0 = wsm busy sr.3 = full status check procedure read status register data (see above) v pp range error 1 0 sr.1 = device protect error 1 0 bus operation command comments standby standby check sr.1 1 = device protect detect rp# = v ih , block lock-bit is set only required for systems implementing lock-bit configuration check sr.5 1 = block erase error sr.5, sr.4, sr.3 and sr.1 are only cleared by the clear status register command in cases where multiple blocks are erased before full status is checked. if error is detected, clear the status register before attempting retry or other error recovery. no suspend block erase yes suspend block erase loop erase confirm block erase successful sr.4, 5 = command sequence error 1 0 sr.5 = block erase error 1 0 standby check sr.3 1 = v pp error detect standby check sr.4, 5 both 1 = command sequence error fig. 3 automated block erase flowchart
LH28F160SGED-L10 - 19 - word write complete start write 40h, address write word data and address read status register 0 sr.7 = 1 full status check if desired repeat for subsequent word writes. sr full status check can be done after each word write or after a sequence of word writes. write ffh after the last word write operation to place device in read array mode. bus operation write write read standby command setup word write comments data = 40h addr = location to be written data = data to be written addr = location to be written status register data check sr.7 1 = wsm ready 0 = wsm busy sr.3 = full status check procedure read status register data (see above) v pp range error 1 0 sr.1 = device protect error 1 0 bus operation command comments standby check sr.1 1 = device protect detect rp# = v ih , block lock-bit is set only required for systems implementing lock-bit configuration sr.4, sr.3 and sr.1 are only cleared by the clear status register command in cases where multiple locations are written before full status is checked. if error is detected, clear the status register before attempting retry or other error recovery. no suspend word write yes suspend word write loop word write word write successful sr.4 = word write error 1 0 standby check sr.3 1 = v pp error detect standby check sr.4 1 = data write error fig. 4 automated word write flowchart
- 20 - LH28F160SGED-L10 block erase resumed start write b0h read status register 0 sr.7 = 1 word write bus operation write read standby standby command erase suspend comments data = b0h addr = x status register data addr = x check sr.7 1 = wsm ready 0 = wsm busy check sr.6 1 = block erase suspended 0 = block erase completed erase resume sr.6 = done? write d0h block erase completed write ffh read array data 1 0 no yes write data = d0h addr = x read or word write? read word write loop read array data fig. 5 block erase suspend/resume flowchart
- 21 - LH28F160SGED-L10 word write resumed start write b0h read status register 0 sr.7 = 1 write ffh bus operation write read standby standby command word write suspend comments data = b0h addr = x status register data addr = x check sr.7 1 = wsm ready 0 = wsm busy check sr.2 1 = word write suspended 0 = word write completed read array sr.2 = read array data done reading write d0h word write completed write ffh read array data 1 0 no yes write read write word write resume data = ffh addr = x read array locations other than that being written. data = d0h addr = x fig. 6 word write suspend/resume flowchart
- 22 - LH28F160SGED-L10 set lock-bit complete start write 60h, block/device address write 01h/f1h, block/device address read status register 0 sr.7 = 1 full status check if desired repeat for subsequent lock-bit set operations. full status check can be done after each lock-bit set operation or after a sequence of lock-bit set operations. write ffh after the last lock-bit set operation to place device in read array mode. bus operation write write read standby command set block/permanent lock-bit setup comments data = 60h addr = block address (block), device address (permanent) data = 01h (block), f1h (permanent) addr = block address (block), device address (permanent) status register data check sr.7 1 = wsm ready 0 = wsm busy sr.3 = full status check procedure read status register data (see above) v pp range error 1 0 sr.1 = device protect error 1 0 bus operation command comments standby standby check sr.1 1 = device protect detect rp# = v ih (set permanent lock-bit operation) wp# = v il and rp# = v ih or permanent lock-bit is set (set block lock-bit operarion) check sr.4 1 = set lock-bit error sr.5, sr.4, sr.3 and sr.1 are only cleared by the clear status register command in cases where multiple lock-bits are set before full status is checked. if error is detected, clear the status register before attempting retry or other error recovery. set block or permanent lock-bit confirm set lock-bit successful sr.4, 5 = command sequence error 1 0 sr.4 = set lock-bit error 1 0 standby check sr.3 1 = v pp error detect standby check sr.4, 5 both 1 = command sequence error fig. 7 set block and permanent lock-bit flowchart
- 23 - LH28F160SGED-L10 clear block lock-bits complete start write 60h write d0h read status register 0 sr.7 = 1 full status check if desired write ffh after the last clear block lock-bits operation to place device in read array mode. bus operation write write read standby command clear block lock-bits setup comments data = 60h addr = x data = d0h addr = x status register data check sr.7 1 = wsm ready 0 = wsm busy sr.3 = full status check procedure read status register data (see above) v pp range error 1 0 sr.1 = device protect error 1 0 bus operation command comments standby standby check sr.1 1 = device protect detect wp# = v il and rp# = v ih or permanent lock-bit is set check sr.5 1 = clear block lock-bits error sr.5, sr.4, sr.3 and sr.1 are only cleared by the clear status register command. if error is detected, clear the status register before attempting retry or other error recovery. clear block lock-bits confirm clear block lock-bits successful sr.4, 5 = command sequence error 1 0 sr.5 = clear block lock-bits error 1 0 standby check sr.3 1 = v pp error detect standby check sr.4, 5 both 1 = command sequence error fig. 8 clear block lock-bits flowchart
- 24 - LH28F160SGED-L10 5 design considerations 5.1 three-line output control the device will often be used in large memory arrays. sharp provides three control inputs to accommodate multiple memory connections. three- line control provides for : a. lowest possible memory power consumption. b. complete assurance that data bus contention will not occur. to use these control inputs efficiently, an address decoder should enable be# while oe# should be connected to all memory devices and the systems read# control line. this assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. rp# should be connected to the system powergood signal to prevent unintended writes during system power transitions. powergood should also toggle during system reset. 5.2 power supply decoupling flash memory power switching characteristics require careful device decoupling. system designers are interested in three supply current issues; standby current levels, active current levels and transient peaks produced by falling and rising edges of be# and oe#. transient current magnitudes depend on the device outputs capacitive and inductive loading. two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. each device should have a 0.1 f ceramic capacitor connected between its v cc and gnd and between its v pp and gnd. these high-frequency, low inductance capacitors should be placed as close as possible to package leads. additionally, for every eight devices, a 4.7 f electrolytic capacitor should be placed at the arrays power supply connection between v cc and gnd. the bulk capacitor will overcome voltage slumps caused by pc board trace inductance. 5.3 v pp trace on printed circuit boards updating flash memories that reside in the target system requires that the printed circuit board designers pay attention to the v pp power supply trace. the v pp pin supplies the memory cell current for word writing and block erasing. use similar trace widths and layout considerations given to the v cc power bus. adequate v pp supply traces and decoupling will decrease v pp voltage spikes and overshoots. 5.4 v cc , v pp , rp# transitions block erase, word write and lock-bit configuration are not guaranteed if v pp falls outside of a valid v pph1/2/3 range, v cc falls outside of a valid v cc1/2/3 range, or rp# v ih or v hh . if v pp error is detected, status register bit sr.3 is set to "1" along with sr.4 or sr.5, depending on the attempted operation. then, the operation will abort and the device will enter deep power-down. the aborted operation may leave data partially altered. therefore, the command sequence must be repeated after normal operation is restored. device power-off or rp# transitions to v il clear the status register. the cui latches commands issued by system software and is not altered by v pp or be# transitions or wsm actions. its state is read array mode upon power-up, after exit from deep power- down or after v cc transitions below v lko . after block erase, word write, or lock-bit configuration, even after v pp transitions down to v pplk , the cui must be placed in read array mode via the read array command if subsequent access to the memory array is desired. 5.5 power-up/down protection the device is designed to offer protection against accidental block erasure, word writing, or lock-bit configuration during power transitions. upon power-
- 25 - LH28F160SGED-L10 up, the device is indifferent as to which power supply (v pp or v cc ) powers-up first. internal circuitry resets the cui to read array mode at power-up. a system designer must guard against spurious writes for v cc voltages above v lko when v pp is active. since both we# and be# must be low for a command write, driving either to v ih will inhibit writes. the cuis two-step command sequence architecture provides added level of protection against data alteration. in-system block lock and unlock capability prevents inadvertent data alteration. the device is disabled while rp# = v il regardless of its control inputs state. 5.6 power consumption when designing portable systems, designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. flash memorys nonvolatility increases usable battery life because data is retained when system power is removed. in addition, deep power-down mode ensures extremely low power consumption even when system power is applied. for example, portable computing products and other power sensitive applications that use an array of devices for solid- state storage can consume negligible power by lowering rp# to v il standby or sleep modes. if access is again needed, the devices can be read following the t phqv and t phwl wake-up cycles required after rp# is first raised to v ih . see section 6.2.4 through 6.2.6 " ac characteristics - read-only and write operations" and fig. 13 , fig. 14 and fig. 15 for more information.
- 26 - LH28F160SGED-L10 6 electrical specifications 6.1 absolute maximum ratings * operating temperature during read, block erase, word write, and lock-bit configuration .... C10 to +70c (note 1) temperature under bias ............. C10 to +80c storage temperature ........................ C 65 to +125c voltage on any pin (except v cc , v pp, and rp#) .. C2.0 to 7.0 v (note 2) v cc supply voltage ................. C2.0 to +7.0 v (note 2) v pp update voltage during block erase, word write and lock-bit configuration .... C 2.0 to +14.0 v (note 2, 3) rp# voltage with respect to gnd during lock-bit configuration operations ... C2.0 to +14.0 v (note 2, 3) output short circuit current ................ 100 ma (note 4) * warning : stressing the device beyond the " absolute maximum ratings" may cause permanent damage. these are stress ratings only. operation beyond the "operating conditions" is not recommended and extended exposure beyond the "operating conditions" may affect device reliability. notes : 1. operating temperature is for commercial product defined by this specification. 2. all specified voltages are with respect to gnd. minimum dc voltage is C0.5 v on input/output pins and C 0.2 v on v cc and v pp pins. during transitions, this level may undershoot to C2.0 v for periods < 20 ns. maximum dc voltage on input/output pins and v cc is v cc +0.5 v which, during transitions, may overshoot to v cc +2.0 v for periods < 20 ns. 3. maximum dc voltage on v pp and rp# may overshoot to +14.0 v for periods < 20 ns. 4. output shorted for no more than one second. no more than one output shorted at a time. notice : the specifications are subject to change without notice. verify with your local sharp sales office that you have the latest datasheet before finalizing a design. symbol parameter min. max. unit test condition t a operating temperature C 10 +70 ?c ambient temperature v cc1 v cc supply voltage (2.7 to 3.6 v) 2.7 3.6 v v cc2 v cc supply voltage (3.30.3 v) 3.0 3.6 v v cc3 v cc supply voltage (5.00.5 v) 4.50 5.50 v 6.2 operating conditions notes : 1. sampled, not 100% tested. 2. be 0 # and be 1 # have half the value of this. symbol parameter note typ. max. unit condition c in input capacitance 2 14 20 pf v in = 0.0 v c out output capacitance 18 24 pf v out = 0.0 v 6.2.1 capacitance (note 1) t a = +25 ? c, f = 1 mhz
LH28F160SGED-L10 - 27 - 6.2.2 ac input/output test conditions test points input output 1.35 1.35 2.7 0.0 fig. 9 transient input/output reference waveform for v cc = 2.7 to 3.6 v ac test inputs are driven at 2.7 v for a logic "1" and 0.0 v for a logic "0". input timing begins, and output timing ends, at 1.35 v. input rise and fall times (10% to 90%) < 10 ns. 1.5 1.5 3.0 0.0 test points input output fig. 10 transient input/output reference waveform for v cc = 3.30.3 v ac test inputs are driven at 3.0 v for a logic "1" and 0.0 v for a logic "0". input timing begins, and output timing ends, at 1.5 v. input rise and fall times (10% to 90%) < 10 ns. 2.0 0.8 2.0 0.8 2.4 0.45 test points input output fig. 11 transient input/output reference waveform for v cc = 5.00.5 v ac test inputs are driven at v oh (2.4 v ttl ) for a logic "1" and v ol (0.45 v ttl ) for a logic "0". input timing begins at v ih (2.0 v ttl ) and v il (0.8 v ttl ). output timing ends at v ih and v il . input rise and fall times (10% to 90 %) < 10 ns. device under test c l includes jig capacitance r l = 3.3 k w c l out 1.3 v 1n914 fig. 12 transient equivalent testing load circuit test configuration c l (pf) v cc = 3.30.3 v, 2.7 to 3.6 v 50 v cc = 5.00.5 v 100 test configuration capacitance loading value
LH28F160SGED-L10 - 28 - 6.2.3 dc characteristics following is the supply current of one bank. for the supply current of one device total, refer to the note 8 . symbol parameter note v cc = 2.7 to 3.6 v v cc = 5.00.5 v unit test typ. max. typ. max. conditions i li input load current 1 0.5 1 a v cc = v cc max. v in = v cc or gnd i lo output leakage current 1 0.5 10 a v cc = v cc max. v out = v cc or gnd cmos inputs 100 100 a v cc = v cc max. i ccs v cc standby current 1, 5, 8 be# = rp# = v cc 0.2 v ttl inputs 22mav cc = v cc max. be# = rp# = v ih i ccd v cc deep power-down 11216a rp# = gnd0.2 v current i out = 0 ma cmos inputs v cc = v cc max. 25 50 ma be# = gnd f = 5 mhz (3.3 v, 2.7 v), 8 mhz (5 v) i ccr v cc read current 1, 4, i out = 0 ma 5, 8 ttl inputs v cc = v cc max. 30 65 ma be# = gnd f = 5 mhz (3.3 v, 2.7 v), 8 mhz (5 v) i out = 0 ma v cc word write or 17 ma v pp = 2.7 to 3.6 v i ccw set lock-bit current 1, 6, 8 17 35 ma v pp = 5.00.5 v 12 30 ma v pp = 12.00.6 v v cc block erase or clear 17 ma v pp = 2.7 to 3.6 v i cce block lock-bits current 1, 6, 8 17 30 ma v pp = 5.00.5 v 12 25 ma v pp = 12.00.6 v i ccws v cc word write or block 1, 2, 8 6 10 ma be# = v ih i cces erase suspend current i pps v pp standby or read current 1, 8 15 15 a v pp v cc i ppr 200 200 a v pp > v cc i ppd v pp deep power-down 1 5 5 a rp# = gnd0.2 v current v pp word write or 80 ma v pp = 2.7 to 3.6 v i ppw set lock-bit current 1, 6, 8 80 80 ma v pp = 5.00.5 v 30 30 ma v pp = 12.00.6 v v pp block erase or clear 40 ma v pp = 2.7 to 3.6 v i ppe block lock-bits current 1, 6, 8 40 40 ma v pp = 5.00.5 v 30 30 ma v pp = 12.00.6 v i ppws v pp word write or block 1, 8 200 200 a v pp = v pph1/2/3 i ppes erase suspend current
LH28F160SGED-L10 - 29 - 6.2.3 dc characteristics (contd.) notes : 1. all currents are in rms unless otherwise noted. typical values at nominal v cc voltage and t a = +25c. 2. i ccws and i cces are specified with the device de- selected. if reading or word writing in erase suspend mode, the devices current draw is the sum of i ccws or i cces and i ccr or i ccw , respectively. 3. block erases, word writes, and lock-bit configurations are inhibited when v pp v pplk , and not guaranteed in the range between v pplk (max.) and v pph1 (min.), between v pph1 (max.) and v pph2 (min.), between v pph2 (max.) and v pph3 (min.), and above v pph3 (max.). 4. automatic power saving (aps) reduces typical i ccr to 1 ma at 5 v v cc and 3 ma at 2.7 to 3.6 v v cc in static operation. 5. cmos inputs are either v cc 0.2 v or gnd0.2 v. ttl inputs are either v il or v ih . 6. sampled, not 100% tested. 7. permanent lock-bit set operations are inhibited when rp# = v ih . block lock-bit configuration operations are inhibited when the permanent lock-bit is set or rp# = v ih and wp# = v il . block erases and word writes are inhibited when the corresponding block lock-bit is set and rp# = v ih and wp# = v il or the permanent lock-bit is set. block erase, word write, and lock-bit configuration operations are not guaranteed with v ih < rp# < v hh and should not be attempted. 8. these are the values of the current which is consumed within one bank area. the value for the bank0 and bank1 should added in order to calculate the value for the whole chip. if the bank0 is in write state and bank1 is in read state, the i cc = i ccw + i ccr . if both banks are in standby mode, the value for the device is 2 times the value in the above table. symbol parameter note v cc = 2.7 to 3.6 v v cc = 5.00.5 v unit test min. max. min. max. conditions v il input low voltage 6 C 0.5 0.8 C 0.5 0.8 v v ih input high voltage 6 2.0 v cc 2.0 v cc v +0.5 +0.5 v cc = v cc min. v ol output low voltage 6 0.4 0.45 v i ol = 5.8 ma (v cc = 5 v), i ol = 2.0 ma (v cc = 3.3 v, 2.7 v) output high voltage v cc = v cc min. v oh1 (ttl) 6 2.4 2.4 v i oh = C2.5 ma (v cc = 5 v) , i oh = C2.0 ma (v cc = 3.3 v, 2.7 v) 0.85 0.85 v v cc = v cc min. v oh2 output high voltage 6 v cc v cc i oh = C2.5 a (cmos) v cc v cc v v cc = v cc min. C 0.4 C 0.4 i oh = C100 a v pplk v pp lockout voltage during 3, 6 1.5 1.5 v normal operations v pp voltage during v pph1 word write, block erase 2.7 3.6 v or lock-bit operations v pp voltage during v pph2 word write, block erase 4.5 5.5 4.5 5.5 v or lock-bit operations v pp voltage during v pph3 word write, block erase 11.4 12.6 11.4 12.6 v or lock-bit operations v lko v cc lockout voltage 2.0 2.0 v v hh rp # unlock voltage 7 11.4 12.6 11.4 12.6 v set permanent lock-bit override block lock-bit
LH28F160SGED-L10 - 30 - 6.2.4 ac characteristics - read-only operations (note 1) ? v cc = 2.7 to 3.6 v, t a = C 10 to +70 ? c version LH28F160SGED-L10 unit symbol parameter note min. max. t avav read cycle time 120 ns t avqv address to output delay 120 ns t elqv be# to output delay 2 120 ns t phqv rp# high to output delay 600 ns t glqv oe# to output delay 2 50 ns t elqx be# to output in low z 3 0 ns t ehqz be# high to output in high z 3 55 ns t glqx oe# to output in low z 3 0 ns t ghqz oe# high to output in high z 3 25 ns t oh output hold from address, be# or oe# change, 30 ns whichever occurs first ?v cc = 3.30.3 v, t a = C 10 to +70?c version LH28F160SGED-L10 unit symbol parameter note min. max. t avav read cycle time 100 ns t avqv address to output delay 100 ns t elqv be# to output delay 2 100 ns t phqv rp# high to output delay 600 ns t glqv oe# to output delay 2 45 ns t elqx be# to output in low z 3 0 ns t ehqz be# high to output in high z 3 45 ns t glqx oe# to output in low z 3 0 ns t ghqz oe# high to output in high z 3 20 ns t oh output hold from address, be# or oe# change, 30 ns whichever occurs first notes : 1. see ac input/output reference waveform ( fig. 9 through fig. 11 ) for maximum allowable input slew rate. 2. oe# may be delayed up to t elqv -t glqv after the falling edge of be# without impact on t elqv . 3. sampled, not 100% tested. ?v cc = 5.00.5 v, t a = C 10 to +70?c version LH28F160SGED-L10 unit symbol parameter note min. max. t avav read cycle time 100 ns t avqv address to output delay 100 ns t elqv be# to output delay 2 100 ns t phqv rp# high to output delay 400 ns t glqv oe# to output delay 2 50 ns t elqx be# to output in low z 3 0 ns t ehqz be# high to output in high z 3 55 ns t glqx oe# to output in low z 3 0 ns t ghqz oe# high to output in high z 3 15 ns t oh output hold from address, be# or oe# change, 30 ns whichever occurs first
LH28F160SGED-L10 - 31 - standby device address selection data valid addresses (a) be x # (e) oe# (g) we# (w) rp# (p) high z high z address stable v ih v il v ih v il v ih v il v ih v il v oh v ol v cc v ih v il t avav t ehqz t ghqz t oh valid output t elqv t glqv t glqx t elqx t avqv t phqv data (d/q) (dq 0 -dq 15 ) fig. 13 ac waveform for read operations
LH28F160SGED-L10 - 32 - 6.2.5 ac characteristics for we#-controlled write operations (note 1) ? v cc = 2.7 to 3.6 v, t a = C 10 to +70 ? c version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 120 ns t phwl rp# high recovery to we# going low 2 1 s t elwl be# setup to we# going low 10 ns t wlwh we# pulse width 50 ns t phhwh rp# v hh setup to we# going high 2 100 ns t vpwh v pp setup to we# going high 2 100 ns t avwh address setup to we# going high 3 50 ns t dvwh data setup to we# going high 3 50 ns t whdx data hold from we# high 5 ns t whax address hold from we# high 5 ns t wheh be# hold from we# high 10 ns t whwl we# pulse width high 30 ns t whgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns ?v cc = 3.30.3 v, t a = C 10 to +70 ? c notes : 1. read timing characteristics during block erase, word write and lock-bit configuration operations are the same as during read-only operations. refer to section 6.2.4 "ac characteristics" for read-only operations. 2. sampled, not 100% tested. 3. refer to table 3 for valid a in and d in for block erase, word write, or lock-bit configuration. 4. v pp should be held at v pph1/2/3 (and if necessary rp# should be held at v hh ) until determination of block erase, word write, or lock-bit configuration success (sr.1/3/4/5 = 0). version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 100 ns t phwl rp# high recovery to we# going low 2 1 s t elwl be# setup to we# going low 10 ns t wlwh we# pulse width 50 ns t phhwh rp# v hh setup to we# going high 2 100 ns t vpwh v pp setup to we# going high 2 100 ns t avwh address setup to we# going high 3 50 ns t dvwh data setup to we# going high 3 50 ns t whdx data hold from we# high 5 ns t whax address hold from we# high 5 ns t wheh be# hold from we# high 10 ns t whwl we# pulse width high 30 ns t whgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns
LH28F160SGED-L10 - 33 - 6.2.5 ac characteristics for we#-controlled write operations (contd.) (note 1) ?v cc = 5.00.5 v, t a = C 10 to +70?c notes : 1. read timing characteristics during block erase, word write and lock-bit configuration operations are the same as during read-only operations. refer to section 6.2.4 "ac characteristics" for read-only operations. 2. sampled, not 100% tested. 3. refer to table 3 for valid a in and d in for block erase, word write, or lock-bit configuration. 4. v pp should be held at v pph1/2/3 (and if necessary rp# should be held at v hh ) until determination of block erase, word write, or lock-bit configuration success (sr.1/3/4/5 = 0). version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 100 ns t phwl rp# high recovery to we# going low 2 1 s t elwl be# setup to we# going low 10 ns t wlwh we# pulse width 40 ns t phhwh rp# v hh setup to we# going high 2 100 ns t vpwh v pp setup to we# going high 2 100 ns t avwh address setup to we# going high 3 40 ns t dvwh data setup to we# going high 3 40 ns t whdx data hold from we# high 5 ns t whax address hold from we# high 5 ns t wheh be# hold from we# high 10 ns t whwl we# pulse width high 30 ns t whgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns
LH28F160SGED-L10 - 34 - v pp (v) rp# (p) data (d/q) we# (w) oe# (g) bex# (e) addresses (a) t whqv1/2/3/4 t whwl valid srd d in t vpwh t qvvl wp# (s) t qvsl t shwh v ih v ih v ih v ih v ih v ih v il v il v il v il v il v il v pph1/2/3 v pplk v il v ih v il (note 1) (note 2) (note 3) (note 4) (note 5) (note 6) a in a in t avav t avwh t whax t elwl t whgl t whdx d in d in high z t phwl t wheh t dvwh t wlwh notes : 1. v cc power-up and standby. 2. write block erase or word write setup. 3. write block erase confirm or valid address and data. 4. automated erase or program delay. 5. read status register data. 6. write read array command. fig. 14 ac waveform for we#-controlled write operations
LH28F160SGED-L10 - 35 - notes : 1. in systems where be# defines the write pulse width (within a longer we# timing waveform), all setup, hold, and inactive we# times should be measured relative to the be# waveform. 2. sampled, not 100% tested. 3. refer to table 3 for valid a in and d in for block erase, word write, or lock-bit configuration. 4. v pp should be held at v pph1/2/3 (and if necessary rp# should be held at v hh ) until determination of block erase, word write, or lock-bit configuration success (sr.1/3/4/5 = 0). 6.2.6 ac characteristics for be#-controlled writes operations (note 1) ?v cc = 2.7 to 3.6 v, t a = C 10 to +70?c ?v cc = 3.30.3 v, t a = C 10 to +70?c version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 120 ns t phel rp# high recovery to be# going low 2 1 s t wlel we# setup to be# going low 0 ns t eleh be# pulse width 70 ns t phheh rp# v hh setup to be# going high 2 100 ns t vpeh v pp setup to be# going high 2 100 ns t aveh address setup to be# going high 3 50 ns t dveh data setup to be# going high 3 50 ns t ehdx data hold from be# high 5 ns t ehax address hold from be# high 5 ns t ehwh we# hold from be# high 0 ns t ehel be# pulse width high 25 ns t ehgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 100 ns t phel rp# high recovery to be# going low 2 1 s t wlel we# setup to be# going low 0 ns t eleh be# pulse width 70 ns t phheh rp# v hh setup to be# going high 2 100 ns t vpeh v pp setup to be# going high 2 100 ns t aveh address setup to be# going high 3 50 ns t dveh data setup to be# going high 3 50 ns t ehdx data hold from be# high 5 ns t ehax address hold from be# high 5 ns t ehwh we# hold from be# high 0 ns t ehel be# pulse width high 25 ns t ehgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns
LH28F160SGED-L10 - 36 - notes : 1. in systems where be# defines the write pulse width (within a longer we# timing waveform), all setup, hold, and inactive we# times should be measured relative to the be# waveform. 2. sampled, not 100% tested. 3. refer to table 3 for valid a in and d in for block erase, word write, or lock-bit configuration. 4. v pp should be held at v pph1/2/3 (and if necessary rp# should be held at v hh ) until determination of block erase, word write, or lock-bit configuration success (sr.1/3/4/5 = 0). version LH28F160SGED-L10 unit symbol parameter note min. max. t avav write cycle time 100 ns t phel rp# high recovery to be# going low 2 1 s t wlel we# setup to be# going low 0 ns t eleh be# pulse width 50 ns t phheh rp# v hh setup to be# going high 2 100 ns t vpeh v pp setup to be# going high 2 100 ns t aveh address setup to be# going high 3 40 ns t dveh data setup to be# going high 3 40 ns t ehdx data hold from be# high 5 ns t ehax address hold from be# high 5 ns t ehwh we# hold from be# high 0 ns t ehel be# pulse width high 25 ns t ehgl write recovery before read 0 ns t qvvl v pp hold from valid srd 2, 4 0 ns t qvph rp# v hh hold from valid srd 2, 4 0 ns 6.2.6 ac characteristics for be#-controlled writes operations (contd.) (note 1) ?v cc = 5.00.5 v, t a = C 10 to +70?c
t avav a in a in t aveh t ehax t wlel t ehgl t ehqv1/2/3/4 t ehel t eleh t ehdx d in d in high z t phel valid srd d in t vpeh t qvvl t ehwh t qvsl t sheh t dveh (note 1) (note 2) (note 3) (note 4) (note 5) (note 6) v pp (v) rp# (p) data (d/q) be x # (e) oe x # (g) we# (w) addresses (a) wp# (s) v ih v ih v ih v ih v ih v ih v il v il v il v il v il v il v pph1/2/3 v pplk v il v ih v il LH28F160SGED-L10 - 37 -
LH28F160SGED-L10 - 38 - v ih v il (a) reset during read array mode (b) reset during block erase, word write, or lock-bit configuration (c) v cc rising timing t plph rp# (p) v ih v il t plph rp# (p) v ih 2.7 v/3.3 v/5 v v il v il v cc t 235vph rp# (p) fig. 16 ac waveform for reset operation 6.2.7 reset operations reset ac specifications notes : 1. when the device power-up, holding rp#-low minimum 100 ns is required after v cc has been in predefined range and also has been in stable there. v cc = 2.7 to 3.6 v v cc = 5.00.5 v symbol parameter note min. max. min. max. unit t plph rp# pulse low time (if rp# is tied to v cc , this specification is not applicable) 100 100 ns v cc 2.7 v to rp# high t 235vph v cc 3.0 v to rp# high 1 100 100 ns v cc 4.5 v to rp# high
- 39 - LH28F160SGED-L10 notes : 1. typical values measured at t a = +25?c and nominal voltages. assumes corresponding lock-bits are not set. subject to change based on device characterization. 2. excludes system-level overhead. 3. sampled, not 100% tested. v pp = 2.7 to 3.6 v v pp = 5.00.5 v v pp = 12.00.6 v symbol parameter note min. typ. (note 1) max. min. typ. (note 1) max. min. typ. (note 1) max. unit t whqv1 word write time 2 49 63 20 28 15.4 s t ehqv1 block write time 2 1.7 2.1 0.7 1.0 0.56 s t whqv2 block erase time 2 3.0 2.0 1.9 s t ehqv2 t whqv3 set lock-bit time 2 44 28 24.4 s t ehqv3 t whqv4 clear block lock-bits 2 3.8 2.6 2.3 s t ehqv4 time t whrh1 word write suspend 12.6 10.5 10.5 s t ehrh1 latency time to read t whrh2 erase suspend latency 34.1 20.2 20.2 s t ehrh2 time to read 6.2.8 block erase, word write and lock-bit configuration performance (note 3) ?v cc = 2.7 to 3.6 v, t a = C 10 to +70?c ?v cc = 3.3 0.3 v, t a = C 10 to +70?c v pp = 3.30.3 v v pp = 5.00.5 v v pp = 12.00.6 v symbol parameter note min. typ. (note 1) max. min. typ. (note 1) max. min. typ. (note 1) max. unit t whqv1 word write time 2 35 45 14 20 11 s t ehqv1 block write time 2 1.2 1.5 0.5 0.7 0.4 s t whqv2 block erase time 2 2.1 1.4 1.3 s t ehqv2 t whqv3 set lock-bit time 2 31 20 17.4 s t ehqv3 t whqv4 clear block lock-bits 2 2.7 1.8 1.6 s t ehqv4 time t whrh1 word write suspend 9 7.5 7.5 s t ehrh1 latency time to read t whrh2 erase suspend latency 24.3 14.4 14.4 s t ehrh2 time to read
LH28F160SGED-L10 - 40 - v pp = 5.00.5 v v pp = 12.00.6 v symbol parameter note min. typ. (note 1) max. min. typ. (note 1) max. unit t whqv1 word write time 2 10 14 7.5 s t ehqv1 block write time 2 0.4 0.5 0.25 s t whqv2 block erase time 2 1.3 1.2 s t ehqv2 t whqv3 set lock-bit time 2 18 15 s t ehqv3 t whqv4 clear block lock-bits time 2 1.6 1.5 s t ehqv4 t whrh1 word write suspend latency time to read 7.5 6 s t ehrh1 t whrh2 erase suspend latency time to read 14.4 14.4 s t ehrh2 notes : 1. typical values measured at t a = +25?c and nominal voltages. assumes corresponding lock-bits are not set. subject to change based on device characterization. 2. excludes system-level overhead. 3. sampled, not 100% tested. 6.2.8 block erase, word write and lock-bit configuration performance (contd.) (note 3) ?v cc = 5.00.5 v, t a = C 10 to +70?c
lh28f160sg e dl -10 device density 160 = 16 m-bit package e = 48-pin tsop (i) (tsop-048-p-1220) normal bend architecture s = symmetrical block power supply type g = smartvoltage technology operating temperature = ?0 to +70 c product line designator for all sharp flash products dual work technology access speed (ns) 10 : 100 ns (5.0 0.5 v), 100 ns (3.3 0.3 v), 120 ns (2.7 to 3.6 v) LH28F160SGED-L10 - 41 - valid operational combinations option order code v cc = 2.7 to 3.6 v v cc = 3.3 0.3 v v cc = 5.0 0.5 v 50 pf load, 50 pf load, 100 pf load, 1.35 v i/o levels 1.5 v i/o levels ttl i/o levels 1 LH28F160SGED-L10 120 ns 100 ns 100 ns 7 ordering information
packaging 1.2 0.1 0.2 0.05 0.1 max. 0.2 typ. 25 48 24 1 12.0 48 _ 0.2 0.5 0.1 0.10 0.08 20.0 0.3 18.4 0.125 m 0.125 19.0 0.1 1.0 0.1 package base plane 48 tsop (tsop048-p-1220)

▲Up To Search▲

Price & Availability of LH28F160SGED-L10

	To Download LH28F160SGED-L10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .